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Same model may have multiple batches, images only for reference.
IPP096N03LGHKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP096N03LGHKSA1

Part No IPP096N03LGHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET / N-Channel 30 V 35A (Tc) 42W (Tc) Through Hole PG-TO220-3-1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 15 V
Power Dissipation (Max) 42W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1065287-IPP096N03LGHKSA1
Ultra Librarian 3D Model Ultra Librarian IPP096N03LGHKSA1 CAD Model

Description

The 1065287-IPP096N03LGHKSA1 is an N-Channel MOSFET transistor from the OptiMOS™ 3 series.

  • Series: OptiMOS™ 3
  • Applications: Power supplies and motor control
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 35A @ 25°C
  • Maximum On-Resistance: 9.6mOhm @ 30A and 10V
  • Gate Threshold Voltage: 2.2V @ 250μA
  • Maximum Power Dissipation: 42W
  • Mounting: Through hole
  • Package: TO-220-3
  • Gate Charge: 15nC @ 10V
  • Temperature Range: -55°C to 175°C
  • Manufacturer: Infineon Technologies

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