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IPP120N04S3-02

Part No IPP120N04S3-02
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description PFET, 120A I(D), 40V, 0.0023OHM,
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14300 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 94 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 603621-IPP120N04S3-02
Ultra Librarian 3D Model Ultra Librarian IPP120N04S3-02 CAD Model

Description

The Infineon Technologies 603621-IPP120N04S3-02 is an N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that falls under the category of Discrete Semiconductor Products.

  • Series: OptiMOS™ series
  • Application: Designed for high-power applications.
  • Drain-to-Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 120A
  • On-Resistance (Rds On): 2.3mOhm @ 80A and 10V
  • Package: Available in through-hole form
  • Mounting: Suitable for mounting on a PCB
  • Manufacturer: Infineon Technologies
  • Status: Currently active in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.6948 $59.1168
39+ $3.0319 $118.2441
59+ $2.9372 $173.2948
82+ $2.8425 $233.0850
106+ $2.7477 $291.2562
141+ $2.4636 $347.3676
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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