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Same model may have multiple batches, images only for reference.
IPP126N10N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP126N10N3GXKSA1

Part No IPP126N10N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 58A TO220-3
Datasheet
IPP126N10N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 46μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 12.3 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 101080-IPP126N10N3GXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP126N10N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP126N10N3GXKSA1 is a MOSFET with a maximum power dissipation of 94W (Tc).

  • Maximum Power Dissipation: 94W (Tc)
  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 58A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 46μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 2500pF @ 50V
  • Maximum Rds On at Id,Vgs: 12.3 mOhm @ 46A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2323 $61.6150
115+ $1.0112 $116.2880
180+ $0.9796 $176.3280
245+ $0.9479 $232.2355
320+ $0.9164 $293.2480
425+ $0.8216 $349.1800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,200 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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