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Same model may have multiple batches, images only for reference.
IPP147N12N3GXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP147N12N3GXKSA1

Part No IPP147N12N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 56A TO220-3  /  N-Channel 120 V 56A (Ta) 107W (Tc) Through Hole PG-TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 60 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP147
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPP147N12N3GXKSA1,IPP147N12N3 G,INFINFIPP147N12N3GXKSA1,IPP147N12N3 G-ND,IPP147N12N3G,SP000652742
Standard Package 50
Win Source Part Number 1001976-IPP147N12N3GXKSA1
Ultra Librarian 3D Model Ultra Librarian IPP147N12N3GXKSA1 CAD Model

Description

The IPP147N12N3GXKSA1 is a high-performance MOSFET from Infineon Technologies that is widely used in electronic devices.

  • Series: OptiMOS™
  • FET Type: N-Channel
  • Power Dissipation (Max): 107W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2792 $63.9600
115+ $1.0497 $120.7155
175+ $1.0169 $177.9575
235+ $0.9841 $231.2635
305+ $0.9513 $290.1465
410+ $0.8529 $349.6890
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MOQ: 50 pcs
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