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Same model may have multiple batches, images only for reference.
IPP180N10N3 G Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

IPP180N10N3 G

Part No IPP180N10N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPP180N10N3 G Infineon Technologies MOSFETs N-Ch 100V 43A TO220-3 OptiMOS 3 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 43 A
Rds On - Drain-Source Resistance 15.5 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 25 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 71 W
Channel Mode Enhancement
Tradename OptiMOS
Packaging Tube
Brand Infineon Technologies
Configuration Single
Fall Time 5 ns
Forward Transconductance - Min 20 S
Product Type MOSFETs
Rise Time 12 ns
Series OptiMOS 3
Factory Pack Quantity Factory Pack Quantity 500
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 12 ns
Part # Aliases IPP18N1N3GXK SP000683090 IPP180N10N3GXKSA1
Unit Weight 0.068784 oz
Ultra Librarian 3D Model Ultra Librarian IPP180N10N3 G CAD Model

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