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Same model may have multiple batches, images only for reference.
IPP180N10N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP180N10N3GXKSA1

Part No IPP180N10N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 43A TO220-3
Datasheet
IPP180N10N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 33μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1001771-IPP180N10N3GXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP180N10N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP180N10N3GXKSA1 is an N-channel MOSFET from Infineon Technologies.

  • Power Dissipation: 71W @ Tc
  • Continuous Drain Current: 43A @ 25°C
  • On-Resistance: 18 mOhm @ 33A and 10V
  • Package: PG-TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Gate Charge: 25nC @ 10V
  • Input Capacitance: 1800pF @ 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1470 $51.6150
110+ $0.9412 $103.5320
165+ $0.9118 $150.4470
230+ $0.8824 $202.9520
295+ $0.8529 $251.6055
395+ $0.7647 $302.0565
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,230 pieces
MOQ: 45 pcs
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