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IPP50R190CE

Part No IPP50R190CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 18.5A PG-TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Gate-Source Threshold Voltage 3.5V @ 510μA
Max Gate Charge 6.1nC @ 10V
Max Input Capacitance 1137pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 127W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 6.2A, 13V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069065-IPP50R190CE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP50R190CE CAD Model

Description

The Infineon Technologies 069065-IPP50R190CE is a N-channel MOSFET transistor in a PG-TO-220-3 package with a drain-source breakdown voltage of 500V and a continuous drain current of 18.5A at 25°C.

  • Package: PG-TO-220-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 18.5A @ 25°C
  • Maximum Rds On at Id,Vgs: 190 mOhm @ 6.2A, 13V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 510μA
  • Maximum Gate Charge: 6.1nC @ 10V
  • Maximum Input Capacitance: 1137pF @ 100V
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5554 $54.4390
80+ $1.2763 $102.1040
125+ $1.2364 $154.5500
170+ $1.1965 $203.4050
220+ $1.1566 $254.4520
290+ $1.0370 $300.7300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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