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Same model may have multiple batches, images only for reference.
SI6469DQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6469DQ-T1-E3

Part No SI6469DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 8TSSOP
Datasheet
SI6469DQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 40nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 211661-SI6469DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6469DQ-T1-E3 CAD Model

Description

The Vishay SI6469DQ-T1-E3 is a P-channel MOSFET designed for discrete semiconductor products.

  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Gate Charge @ 4.5V: 40nC
  • Maximum Rds On @ Id,Vgs: 28 mOhm @ 6A, 4.5V
  • Package: 8-TSSOP
  • Application: Circuit protection
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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