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Same model may have multiple batches, images only for reference.
IPP50R299CPXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP50R299CPXKSA1

Part No IPP50R299CPXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 12A TO220-3
Datasheet
IPP50R299CPXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1190pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 126175-IPP50R299CPXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP50R299CPXKSA1 CAD Model

Description

The Infineon Technologies IPP50R299CPXKSA1 is a MOSFET transistor with an N-channel polarity.

  • Manufacturer: Infineon Technologies
  • Polarity: N-channel
  • Maximum Power Dissipation: 104W (Tc)
  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Maximum Rds On @ Id,Vgs: 299 mOhm @ 6.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1190pF @ 100V
  • Status: active
  • Package: PG-TO220-3-1

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