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Same model may have multiple batches, images only for reference.
IPP60R099CPAAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP60R099CPAAKSA1

Part No IPP60R099CPAAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 31A TO220-3  /  N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3
Datasheet
IPP60R099CPAAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V
Power Dissipation (Max) 255W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP60R099
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPP60R099CPA,SP000315418,2156-IPP60R099CPAAKSA1,IPP60R099CPA-ND,INFINFIPP60R099CPAAKSA1
Standard Package 500
Win Source Part Number 1065298-IPP60R099CPAAKSA1
Ultra Librarian 3D Model Ultra Librarian IPP60R099CPAAKSA1 CAD Model

Description

Infineon Technologies presents the IPP60R099CPAAKSA1, an N-Channel MOSFET.

  • Maximum Drain to Source Voltage: 600V
  • Continuous Drain Current: 31A (Tc) @ 25°C
  • Maximum Power Dissipation: 255W (Tc)
  • Gate Charge (Qg): 80 nC @ 10 V
  • Rds On (Max): 105mOhm @ 18A, 10V
  • Input Capacitance (Ciss) (Max): 2800 pF @ 100 V
  • Case/Package: TO-220-3
  • Gate-Source Voltage (Vgs): ±20V

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