The 603659-IPP65R065C7 is a N-Channel MOSFET transistor from the CoolMOS™ series by Infineon Technologies. It is designed for use in discrete semiconductor products, specifically in FETs and MOSFETs. This MOSFET features a drain to source voltage (Vdss) of 650V and a continuous drain current (Id) of 33A at 25°C. With a maximum on-resistance (Rds On) of 65mOhm at 17.1A and 10V, it offers efficient performance. The gate threshold voltage (Vgs(th)) is 4V at 850μA. The MOSFET operates at a temperature range of -55°C to 150°C, making it suitable for a wide range of applications. It is available in a through-hole TO-220-3 package. The 603659-IPP65R065C7 is an active product from Infineon Technologies and is commonly used in power management circuits and switching applications.