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Same model may have multiple batches, images only for reference.
IPP65R225C7 Real Image
Same model may have multiple batches, images only for reference.

IPP65R225C7

Part No IPP65R225C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR, 1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 874859-IPP65R225C7
Ultra Librarian 3D Model Ultra Librarian IPP65R225C7 CAD Model

Description

The CoolMOS™ series MOSFET is a high-quality N-Channel transistor designed for various electronic applications.

  • Vdss: 650V
  • Id: 11A @ 25°C
  • Rds On (Max): 225mOhm @ 4.8A and 10V
  • Qg: 20nC @ 10V
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Infineon Technologies
  • Package: TO-220-3

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Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
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