The Infineon Technologies IPP65R600C6 is a N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

• Maximum Power Dissipation: 63W (Tc)
• Drain-Source Breakdown Voltage: 650V
• Maximum Continuous Drain Current: 7.3A (Tc) @ 25°C
• Maximum Rds On: 600 mOhm @ 2.1A, 10V
• Gate-Source Threshold Voltage: 3.5V @ 210μA
• Maximum Gate Charge: 23nC @ 10V
• Maximum Input Capacitance: 440pF @ 100V
• Maximum Gate-Source Voltage: ±20V
• Package: PG-TO-220-3 case
• Mounting: Through the hole
• Suitable for: Use in applications that require a N-channel MOSFET transistor with a low power dissipation and high voltage rating