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Same model may have multiple batches, images only for reference.
IPP70P04P409AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP70P04P409AKSA1

Part No IPP70P04P409AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH TO220-3
Datasheet
IPP70P04P409AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 120μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 4810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3
Win Source Part Number 1046027-IPP70P04P409AKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP70P04P409AKSA1 CAD Model

Description

The Infineon Technologies IPP70P04P409AKSA1 is a P-Channel MOSFET transistor used for various applications.

  • Maximum Rds on: 9.4 mOhm @ 70A and 10V
  • Power Dissipation: 75W (Tc)
  • Package: PG-TO220-3
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: Discontinued (EOL)

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