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Same model may have multiple batches, images only for reference.
IPP80N03S4L-03 Real Image
Same model may have multiple batches, images only for reference.

IPP80N03S4L-03

Part No IPP80N03S4L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 90μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 9750pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046030-IPP80N03S4L-03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP80N03S4L-03 CAD Model

Description

The Infineon Technologies IPP80N03S4L-03 is a through-hole mounting style N-channel MOSFET discrete semiconductor product.

  • Maximum Power Dissipation: 136W (Tc)
  • Maximum Continuous Drain Current: 80A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On @ Id,Vgs: 2.7 mOhm @ 80A, 10V
  • Popularity: medium
  • Supply and Demand Status: balanced
  • Package: PG-TO220-3-1

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8041 $63.1435
80+ $1.4796 $118.3680
125+ $1.4334 $179.1750
170+ $1.3872 $235.8240
220+ $1.3410 $295.0200
290+ $1.2024 $348.6960
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Availability: 5,020 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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