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IPP80N04S306AKSA1

Part No IPP80N04S306AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 52μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 3250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046033-IPP80N04S306AKSA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 500
Ultra Librarian 3D Model Ultra Librarian IPP80N04S306AKSA1 CAD Model

Description

The IPP80N04S306AKSA1 is a N-Channel MOSFET transistor used in discrete semiconductor products from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 52μA
  • Gate Charge: 47nC @ 10V
  • Input Capacitance: 3250pF @ 25V
  • Rds On (Max) @ Id,Vgs: 5.7 mOhm @ 80A, 10V
  • Power Dissipation: 100W (Tc)
  • Mounting Type: Through Hole
  • Product Status: Obsolete(EOL)
  • Packaging: Tube/Rail
  • Pieces per Package: 500

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0326 $61.9560
140+ $0.8473 $118.6220
215+ $0.8209 $176.4935
295+ $0.7943 $234.3185
380+ $0.7678 $291.7640
505+ $0.6884 $347.6420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,400 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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