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Same model may have multiple batches, images only for reference.
IPP80N04S4-04 Real Image
Same model may have multiple batches, images only for reference.

IPP80N04S4-04

Part No IPP80N04S4-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO220-3-1
Datasheet
IPP80N04S4-04 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 35μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 3440pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 205249-IPP80N04S4-04
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP80N04S4-04 CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel semiconductor device with a drain-source breakdown voltage of 40V and a continuous drain current of 80A at 25°C.

  • Gate-Source Threshold Voltage: 4V @ 35μA
  • Maximum Gate Charge: 43nC @ 10V
  • Maximum Input Capacitance: 3440pF @ 25V
  • Maximum Rds On at Id,Vgs: 4.6 mOhm @ 80A, 10V
  • Power Dissipation: 71W (Tc)
  • Package: PG-TO220-3-1
  • Dimensions: TO-220-3
  • Commonly used in: Various applications, including power supplies, motor control, and lighting systems

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Quantity Unit Price Ext. Price
35+ $1.8392 $64.3720
80+ $1.5091 $120.7280
120+ $1.4620 $175.4400
165+ $1.4149 $233.4585
215+ $1.3677 $294.0555
285+ $1.2261 $349.4385
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