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Same model may have multiple batches, images only for reference.
IPP80N04S4L04AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP80N04S4L04AKSA1

Part No IPP80N04S4L04AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO220-3-1
Datasheet
IPP80N04S4L04AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 35μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 4690pF @ 25V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046035-IPP80N04S4L04AKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP80N04S4L04AKSA1 CAD Model

Description

The Infineon Technologies IPP80N04S4L04AKSA1 is a N-channel MOSFET transistor that is ideal for use in various applications.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On at Id,Vgs: 4.3 mOhm @ 80A, 10V
  • Maximum Gate-Source Voltage: +20V, -16V
  • Maximum Gate Charge: 60nC @ 10V
  • Package: PG-TO220-3-1
  • Dimensions: TO-220-3
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation (max): 71W (Tc)
  • Category: Discrete Semiconductor Products
  • Supply and Demand: Balance

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Quantity Unit Price Ext. Price
30+ $1.7658 $52.9740
70+ $1.4489 $101.4230
110+ $1.4036 $154.3960
150+ $1.3584 $203.7600
195+ $1.3131 $256.0545
255+ $1.1772 $300.1860
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