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IPP80N08S406AKSA1

Part No IPP80N08S406AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 80A TO220-3  /  N-Channel 80 V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP80N08
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPP80N08S406AKSA1,INFINFIPP80N08S406AKSA1,SP000984298
Standard Package 500
Win Source Part Number 990593-IPP80N08S406AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP80N08S406AKSA1 CAD Model

Description

The Infineon Technologies IPP80N08S406AKSA1 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Series: OptiMOS™
  • Compliant: AEC-Q101, Automotive
  • Vdss: 80V
  • Continuous Drain Current: 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
  • Vgs(th) (Max) @ Id: 4V @ 90μA
  • Package: TO-220-3
  • Supplier Device Package: PG-TO220-3-1

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.2676 $65.3520
49+ $2.6813 $131.3837
75+ $2.5975 $194.8125
103+ $2.5136 $258.9008
134+ $2.4300 $325.6200
179+ $2.1784 $389.9336
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Availability: 135 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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