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Same model may have multiple batches, images only for reference.
IPP80P03P4L-07 Real Image
Same model may have multiple batches, images only for reference.

IPP80P03P4L-07

Part No IPP80P03P4L-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 80A TO220-3
Datasheet
IPP80P03P4L-07 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 130μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 5700pF @ 25V
Maximum Gate-Source Voltage +5V, -16V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 7.2 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069082-IPP80P03P4L-07
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP80P03P4L-07 CAD Model

Description

The Infineon Technologies IPP80P03P4L-07 is a P-channel MOSFET.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On @ Id, Vgs: 7.2 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 2V @ 130μA
  • Maximum Gate Charge: 80nC @ 10V
  • Maximum Input Capacitance: 5700pF @ 25V
  • Power Dissipation: 88W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: PG-TO220-3-1
  • Applications: power management, motor control, and battery protection.

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Quantity Unit Price Ext. Price
40+ $1.6031 $64.1240
90+ $1.3155 $118.3950
140+ $1.2740 $178.3600
190+ $1.2335 $234.3650
245+ $1.1920 $292.0400
325+ $1.0684 $347.2300
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