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Same model may have multiple batches, images only for reference.
IPP80R1K4P7 Real Image
Same model may have multiple batches, images only for reference.

IPP80R1K4P7

Part No IPP80R1K4P7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPP80R1K4 - 800V COOLMOS N-CHANN
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
Power Dissipation (Max) 32W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 921342-IPP80R1K4P7
Ultra Librarian 3D Model Ultra Librarian IPP80R1K4P7 CAD Model

Description

The CoolMOS™ series MOSFET is a high-performance N-Channel transistor designed for various electronic applications.

  • Vdss: 800V
  • Id: 4A @ 25°C
  • Rds On (Max): 1.4 Ohm @ 1.4A and 10V
  • Qg: 10nC @ 10V
  • Operating Temperature: -55°C to 150°C
  • Package: TO-220-3
  • Manufacturer: Infineon Technologies

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Quantity Unit Price Ext. Price
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85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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Availability: 2,870 pieces
MOQ: 35 pcs
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