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Same model may have multiple batches, images only for reference.
IPS060N03LG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPS060N03LG

Part No IPS060N03LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO251-3
Datasheet
IPS060N03LG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 2400pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 069090-IPS060N03LG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS060N03LG CAD Model

Description

The Infineon Technologies 165848 is a MOSFET device that has a maximum power dissipation of 56W (Tc) and a continuous drain current of 50A (Tc) @ 25°C.

  • Supply and Demand Status: balanced
  • Package: PG-TO251-3
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9679 $58.0740
150+ $0.7946 $119.1900
225+ $0.7704 $173.3400
315+ $0.7450 $234.6750
405+ $0.7207 $291.8835
540+ $0.6456 $348.6240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,900 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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