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Same model may have multiple batches, images only for reference.
IPS060N03LGAKMA1 Real Image
Same model may have multiple batches, images only for reference.

IPS060N03LGAKMA1

Part No IPS060N03LGAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO251-3
Datasheet
IPS060N03LGAKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 2400pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 103373-IPS060N03LGAKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS060N03LGAKMA1 CAD Model

Description

The Infineon Technologies IPS060N03LGAKMA1 is a N-Channel MOSFET that is ideal for use in discrete semiconductor products.

  • Power Dissipation: 56W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V and 10V
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 6 mOhm @ 30A, 10V
  • Package: PG-TO251-3
  • Dimension: TO-251-3 Stub Leads, IPak
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting: Through hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 2400pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.6775 $60.7425
17+ $7.1194 $121.0298
26+ $6.8977 $179.3402
35+ $6.6747 $233.6145
45+ $6.4530 $290.3850
60+ $5.7854 $347.1240
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Availability: 15,600 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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