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IPS090N03LG

Part No IPS090N03LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A TO251-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 1600pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 069093-IPS090N03LG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS090N03LG CAD Model

Description

The Infineon Technologies IPS090N03LG is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A (Tc)
  • Power Dissipation: 42W (Tc)
  • Package: PG-TO251-3
  • Mounting: Through hole
  • Dimension: TO-251-3 Stub Leads, IPak
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: balanced
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0416 $60.4992
28+ $4.1361 $115.8108
44+ $4.0079 $176.3476
60+ $3.8785 $232.7100
78+ $3.7491 $292.4298
104+ $3.3611 $349.5544
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Availability: 2,639 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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