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Same model may have multiple batches, images only for reference.
IPS65R950C6 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPS65R950C6

Part No IPS65R950C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4.5A TO-251
Datasheet
IPS65R950C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 200μA
Max Gate Charge 15.3nC @ 10V
Max Input Capacitance 328pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 040654-IPS65R950C6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS65R950C6 CAD Model

Description

The Infineon Technologies IPS65R950C6 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 4.5A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 200μA
  • Maximum Rds on at Id, Vgs: 950 mOhm @ 1.5A, 10V
  • Package: TO-251-3 stub leads, IPak package
  • Popularity: Medium
  • Device Status: Active
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4851 $58.2120
290+ $0.3985 $115.5650
450+ $0.3858 $173.6100
620+ $0.3731 $231.3220
800+ $0.3615 $289.2000
1,075+ $0.3234 $347.6550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,800 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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