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Same model may have multiple batches, images only for reference.
IPT008N06NM5LFATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPT008N06NM5LFATMA1

Part No IPT008N06NM5LFATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description TRENCH 40<-<100V PG-HSOF-8
Datasheet
IPT008N06NM5LFATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1168736-IPT008N06NM5LFATMA1
Win Source Part Number Cross
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series OptiMOS™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 454A (Tc)
Ultra Librarian 3D Model Ultra Librarian IPT008N06NM5LFATMA1 CAD Model

Description

The Infineon Technologies OptiMOS™ is a series of N-channel MOSFETs designed for high-performance applications.

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • Channel Type: N-Channel
  • Technology: Metal Oxide
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 454A
  • Packaging: Tape & Reel, Cut Tape, and Digi-Reel
  • Product Status: Active

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18+ $5.8627 $105.5286
27+ $5.6795 $153.3465
37+ $5.4963 $203.3631
48+ $5.3131 $255.0288
63+ $4.7634 $300.0942
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Availability: 3,190 pieces
MOQ: 7 pcs
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