The OptiMOS™ IPT010N08NM5ATMA1 MOSFET is a highly efficient N-channel FET, designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

• Drain to Source Voltage (Vdss): 80 V
• Continuous Drain Current (Id): 43A (Ta), 425A (Tc)
• Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 280μA
• Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
• Package / Case: 8-PowerSFN
• Supplier Device Package: Infineon Technologies PG-HSOF-8
• Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
• Vgs (Max): ±20V
• Temperature Range - Operating: -55°C ~ 175°C (TJ)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V