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MMDT5551-TP

Part No MMDT5551-TP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 160V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Micro Commercial Co
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 150mV @ 1mA, 10mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1078384-MMDT5551-TP
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian MMDT5551-TP CAD Model

Description

The MMDT5551-TP is a dual NPN transistor with a maximum collector current of 200mA and a collector-emitter breakdown voltage of 160V.

  • Type: Dual NPN Transistor
  • Maximum Collector Current: 200mA
  • Collector-Emitter Breakdown Voltage: 160V
  • Typical Gain: 80 @ 10mA and 5V
  • Package: SOT-363
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 200mW
  • Frequency Transition: 300MHz
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,140+ $0.0508 $57.9120
2,780+ $0.0416 $115.6480
4,290+ $0.0404 $173.3160
5,885+ $0.0393 $231.2805
7,580+ $0.0381 $288.7980
10,000+ $0.0347 $347.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,260 pieces
MOQ: 1140 pcs
Order Increment : 1 pcs
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