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IPT012N08N5ATMA1 Real Image IPT012N08N5ATMA1 Real Image
Same model may have multiple batches, images only for reference.
IPT012N08N5ATMA1 Real Image IPT012N08N5ATMA1 Real Image
IPT012N08N5ATMA1 Real Image IPT012N08N5ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPT012N08N5ATMA1

Part No IPT012N08N5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 300A 8HSOF
Datasheet
IPT012N08N5ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.8V @ 280μA
Max Gate Charge 223nC @ 10V
Max Input Capacitance 17000pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 1.2 mOhm @ 150A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-HSOF-8-1
Dimension 8-PowerSFN
Win Source Part Number 1046095-IPT012N08N5ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPT012N08N5ATMA1 CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel power transistor with a drain-source breakdown voltage of 80V and a continuous drain current of 300A @ 25°C.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 300A @ 25°C
  • Power Dissipation: Up to 375W (Tc)
  • Drive Voltage: Up to 10V
  • Gate-Source Threshold Voltage: 3.8V @ 280μA
  • Maximum Gate Charge: 223nC @ 10V
  • Maximum Input Capacitance: 17000pF @ 40V
  • Package: PG-HSOF-8-1
  • Mounting: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Status: Active

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