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Same model may have multiple batches, images only for reference.
IPT019N08N5ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPT019N08N5ATMA1

Part No IPT019N08N5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 32A/247A 8HSOF / N-Channel 80 V 32A (Ta), 247A (Tc) 231W (Tc) Surface Mount PG-HSOF-8-1
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™5
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 247A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 159µA
Gate Charge (Qg) (Max) @ Vgs 127 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 40 V
Power Dissipation (Max) 231W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
Base Product Number IPT019
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874880-IPT019N08N5ATMA1
Ultra Librarian 3D Model Ultra Librarian IPT019N08N5ATMA1 CAD Model

Description

The OptiMOS™5 series MOSFET IPT019N08N5ATMA1 is a high-performance N-channel power transistor from Infineon Technologies.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 32A
  • Rds On (Max): 1.9mOhm @ 150A, 10V
  • Package: 8-PowerSFN
  • Mounting: Surface mount
  • Gate Charge: 127nC @ 10V
  • Product Status: Active
  • Temperature Range: -55°C to 175°C

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27+ $4.4116 $119.1132
41+ $4.2594 $174.6354
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95+ $3.6510 $346.8450
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