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Same model may have multiple batches, images only for reference.
UNR32A6G0L Real Image
Same model may have multiple batches, images only for reference.

UNR32A6G0L

Part No UNR32A6G0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 100MW SSSMINI3
Datasheet
UNR32A6G0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSSMini3-F1
Win Source Part Number 1116446-UNR32A6G0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR32A6G0L CAD Model

Description

The UNR32A6G0L is an NPN pre-biased transistor with a maximum current collector of 80mA and a VCEO maximum collector-emitter breakdown voltage of 50V from Panasonic Electronic Components.

  • Maximum Current Collector: 80mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 160 @ 5mA, 10V
  • Collector Cut-Off Current (Max): 500nA
  • Maximum Power Dissipation: 100mW
  • Maximum Vce (sat): 250mV @ 300μA, 10mA
  • Package: SSSMini3-F1
  • Ideal For: Use in Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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