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IPU060N03LG

Part No IPU060N03LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-251-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 2400pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069100-IPU060N03LG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPU060N03LG CAD Model

Description

The Infineon Technologies IPU060N03LG is a N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 50A (Tc).

  • Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO251-3
  • Mounting: Through hole
  • Designed For: Discrete semiconductor products
  • Power Dissipation: 56W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 2400pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.1896 $61.8960
23+ $5.0797 $116.8331
36+ $4.9203 $177.1308
49+ $4.7621 $233.3429
63+ $4.6027 $289.9701
84+ $4.1268 $346.6512
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,491 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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