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IPU07N03LA

Part No IPU07N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A TO-251
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package P-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 005123-IPU07N03LA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPU07N03LA CAD Model

Description

The Infineon Technologies IPU07N03LA is a power MOSFET designed for use in discrete semiconductor products.

  • Supply and Demand Status: Limited
  • Maximum Power Dissipation: 83W (Tc)
  • Feature: Low gate charge
  • Suitable For: Applications where a low Rds On is required
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 30A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9563 $62.1595
150+ $0.7847 $117.7050
230+ $0.7601 $174.8230
315+ $0.7357 $231.7455
410+ $0.7112 $291.5920
545+ $0.6376 $347.4920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,700 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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