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Same model may have multiple batches, images only for reference.
IPU20N03L G Real Image
Same model may have multiple batches, images only for reference.

IPU20N03L G

Part No IPU20N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A IPAK
Datasheet
IPU20N03L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 25μA
Max Gate Charge 11nC @ 5V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package P-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1046102-IPU20N03L G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPU20N03L G CAD Model

Description

Infineon Technologies IPU20N03L G is an N-channel MOSFET.

  • Maximum Power Dissipation: 60W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 30A (Tc)
  • Maximum Rds On: 20 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2V @ 25μA
  • Maximum Gate Charge: 11nC @ 5V
  • Case/Package: P-TO251-3
  • Dimension: TO-251-3 Short Leads, IPak, TO-251AA
  • Lifecycle Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)

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