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IPU60R2K1CEBKMA1

Part No IPU60R2K1CEBKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.3A TO251-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CE
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V
FET Feature -
Power Dissipation (Max) 22W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number IPU60R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378636-IPU60R2K1CEBKMA1
Ultra Librarian 3D Model Ultra Librarian IPU60R2K1CEBKMA1 CAD Model

Description

The CoolMOS™ CE is an obsolete MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies.

  • FET Type: MOSFET N-Channel, Metal Oxide
  • Vdss: 600V
  • Id @ 25°C: 2.3A (Tc)
  • Vgs(th): 3.5V @ 60μA
  • Rds On @ Id, Vgs: 2.1Ohm @ 1.3A, 10V
  • Vgs - Max: ±20V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Package: Tube
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,900 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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