Diodes Incorporated presents the MMBF170Q-7-F, a high-performance N-Channel enhancement mode field effect transistor (FET) designed for power management applications. This compact and efficient MOSFET is a reliable solution for designers looking to improve switching performance and reduce power losses in their circuits.

Key Features

• Device Type: N-Channel MOSFET
• Configuration: Single
• Drain-Source Breakdown Voltage (V<sub>DS): 60V
• Continuous Drain Current (I<sub>D): 500mA
• R<sub>DS(on): Low on-resistance for efficient operation
• High-Speed Switching: Suitable for high-speed circuit applications
• Package: SOT-23, a surface-mount package ideal for compact PCB designs

Applications

The MMBF170Q-7-F is versatile and can be used in a variety of applications, including:

• Power Management
• Load Switch
• Battery Management
• DC-DC Converters
• Motor Drive Control

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The MMBF170Q-7-F is designed to meet stringent quality standards, ensuring reliability and performance in demanding applications. With its robust construction, it is built to withstand the rigors of industrial environments.

Environmental Compliance

The MMBF170Q-7-F is environmentally friendly and complies with RoHS directives, making it suitable for use in green products and applications that require lead-free components.

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 60V Gate-Source Voltage (V<sub>GS) ±20V Continuous Drain Current (I<sub>D) 500mA Power Dissipation (P<sub>D) 350mW Operating Temperature Range -55°C to +150°C

For more detailed information, please refer to the MMBF170Q-7-F datasheet.