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Same model may have multiple batches, images only for reference.
IPU60R600C6 Real Image
Same model may have multiple batches, images only for reference.

IPU60R600C6

Part No IPU60R600C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603778-IPU60R600C6
Ultra Librarian 3D Model Ultra Librarian IPU60R600C6 CAD Model

Description

The IPU60R600C6 is an N-channel MOSFET from the CoolMOS series.

  • Vdss: 600V
  • Id: 7.3A @ 25°C
  • Rds On (Max): 600mOhm @ 2.4A and 10V
  • Mounting: Through-Hole
  • Package: TO-251-3 Short Leads
  • Qg: 20.5 nC @ 10V
  • Operating Temperature: -55°C to 150°C

Infineon Technologies, a trusted semiconductor manufacturer, produces this MOSFET. With its high voltage capability and low Rds On, the IPU60R600C6 is an excellent choice for power electronics applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1470 $51.6150
110+ $0.9412 $103.5320
165+ $0.9118 $150.4470
230+ $0.8824 $202.9520
295+ $0.8529 $251.6055
395+ $0.7647 $302.0565
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MOQ: 45 pcs
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