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Same model may have multiple batches, images only for reference.
IPUH6N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPUH6N03LB G

Part No IPUH6N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A IPAK
Datasheet
IPUH6N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2800pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1046106-IPUH6N03LB G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPUH6N03LB G CAD Model

Description

The Infineon Technologies IPUH6N03LB G is an N-channel MOSFET that is designed for various applications.

  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Package: PG-TO251-3
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 83W (Tc)
  • Maximum Rds On: 6.3 mOhm @ 50A, 10V
  • Gate Charge: 22nC @ 5V
  • Input Capacitance: 2800pF @ 15V
  • Status: Obsolete
  • Supply and Demand: Balance

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