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Same model may have multiple batches, images only for reference.
IPW60R018CFD7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW60R018CFD7XKSA1

Part No IPW60R018CFD7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH
Datasheet
IPW60R018CFD7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CFD7
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs 251 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9901 pF @ 400 V
Power Dissipation (Max) 416W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R018
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874897-IPW60R018CFD7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R018CFD7XKSA1 CAD Model

Description

The Infineon Technologies IPW60R018CFD7XKSA1 is an N-Channel MOSFET transistor.

  • Series: CoolMOS™ CFD7
  • Vdss: 600V
  • Id @ 25°C: 101A
  • Rds On: 18mOhm @ 58.2A and 10V
  • Vgs(th): 4.5V @ 2.91mA
  • Power Dissipation: 416W
  • Mounting: Through-hole
  • Package: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.6527 $53.2216
17+ $6.2316 $105.9372
25+ $6.0211 $150.5275
36+ $5.6000 $201.6000
47+ $5.3895 $253.3065
58+ $5.1790 $300.3820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,370 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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