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Same model may have multiple batches, images only for reference.
IPW60R040C7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW60R040C7XKSA1

Part No IPW60R040C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 50A TO247-3
Datasheet
IPW60R040C7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 400 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R040
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 847268-IPW60R040C7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R040C7XKSA1 CAD Model

Description

The IPW60R040C7XKSA1 is a CoolMOS C7 series MOSFET transistor.

  • Channel Type: N-Channel
  • Vdss (Drain to Source Voltage): 600V
  • Id (Continuous Drain Current) @ 25°C: 50A
  • Rds On (On-Resistance): 40mOhm @ 24.9A and 10V Vgs
  • Power Dissipation (Max): 227W
  • Mounting Type: Through-Hole
  • Package: TO-247-3
  • Gate Charge (Qg) @ 10V: 107nC
  • Input Capacitance (Ciss) @ 400V Vds: 4340pF
  • Operating Temperature: -55°C to 150°C

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Quantity Unit Price Ext. Price
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16+ $6.3562 $101.6992
25+ $6.1575 $153.9375
34+ $5.9589 $202.6026
44+ $5.7603 $253.4532
59+ $5.1644 $304.6996
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