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IPW60R070C6FKSA1

Part No IPW60R070C6FKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 600V 53A TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 70mOhm at 25.8A, 10V
Vgs(th) (Maximum) at Id 3.5V at 1.72mA
Gate Charge (Qg) (Maximum) at Vgs 170nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3800pF at 100V
Power Dissipation (Maximum) 391W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 810117-IPW60R070C6FKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R070C6FKSA1 CAD Model

Description

The IPW60R070C6FKSA1 is a high-quality electronic component manufactured by Infineon Technologies.

  • Supply & Demand Status: Limited
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 600V

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.6342 $50.9762
27+ $3.8024 $102.6648
41+ $3.6836 $151.0276
57+ $3.5647 $203.1879
73+ $3.4459 $251.5507
98+ $3.0894 $302.7612
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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