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IPW60R080P7XKSA1

Part No IPW60R080P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 37A TO247-3  /  N-Channel 600 V 37A (Tc) 129W (Tc) Through Hole PG-TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 400 V
Power Dissipation (Max) 129W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R080
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001647040
Standard Package 50
Win Source Part Number 1065377-IPW60R080P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R080P7XKSA1 CAD Model

Description

The Infineon Technologies IPW60R080P7XKSA1 is an N-channel MOSFET transistor with a drain to source voltage of 600 V and a continuous drain current of 37A (Tc).

  • Maximum Power Dissipation: 129W (Tc)
  • Gate Charge: 51 nC @ 10 V
  • Input Capacitance: 2180 pF @ 400 V
  • Vgs(th): 4V @ 590µA
  • Compliance: CoolMOS™ P7 and RoHS
  • Package: TO-247-3
  • Mounting: Through-hole technology

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.1288 $60.5152
9+ $14.1528 $127.3752
13+ $13.6648 $177.6424
19+ $12.6888 $241.0872
24+ $12.2007 $292.8168
30+ $11.7126 $351.3780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,220 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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