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Same model may have multiple batches, images only for reference.
IPW60R125C6 Real Image
Same model may have multiple batches, images only for reference.

IPW60R125C6

Part No IPW60R125C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO247
Datasheet
IPW60R125C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 960μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 2127pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 219W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 14.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069118-IPW60R125C6
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW60R125C6 CAD Model

Description

The IPW60R125C6 is an N-channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 30A (Tc)
  • Power Dissipation: 219W (Tc)
  • Maximum Rds On @ Id,Vgs: 125 mOhm @ 14.5A, 10V
  • Package: PG-TO247-3
  • Popularity: high

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $38.6100 $77.2200
4+ $31.6800 $126.7200
6+ $30.6900 $184.1400
8+ $29.7001 $237.6008
11+ $28.7100 $315.8100
14+ $25.7400 $360.3600
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Availability: 220 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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