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IPW60R160P6

Part No IPW60R160P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 100 V
Power Dissipation (Max) 176W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 603788-IPW60R160P6
Ultra Librarian 3D Model Ultra Librarian IPW60R160P6 CAD Model

Description

The 603788-IPW60R160P6 is a N-Channel MOSFET transistor from the CoolMOS™ series by Infineon Technologies.

  • Vdss: 600V
  • Id (25°C): 23.8A
  • Rds On (Max): 160mOhm @ 9A and 10V
  • Qg: 44nC @ 10V
  • Ciss: 2080pF @ 100V
  • Mounting Type: Through-Hole
  • Package: TO-247-3
  • Power Dissipation: 176W @ Tc
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,480 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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