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Same model may have multiple batches, images only for reference.
IPW60R160P6 Real Image
Same model may have multiple batches, images only for reference.

IPW60R160P6

Part No IPW60R160P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 100 V
Power Dissipation (Max) 176W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 603788-IPW60R160P6
Ultra Librarian 3D Model Ultra Librarian IPW60R160P6 CAD Model

Description

The 603788-IPW60R160P6 is a N-Channel MOSFET transistor from the CoolMOS™ series by Infineon Technologies.

  • Vdss: 600V
  • Id (25°C): 23.8A
  • Rds On (Max): 160mOhm @ 9A and 10V
  • Qg: 44nC @ 10V
  • Ciss: 2080pF @ 100V
  • Mounting Type: Through-Hole
  • Package: TO-247-3
  • Power Dissipation: 176W @ Tc
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Active

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Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
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