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IPW60R180P7XKSA1

Part No IPW60R180P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 18A TO247-3 / N-Channel 650 V 18A (Tc) 72W (Tc) Through Hole PG-TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V
Power Dissipation (Max) 72W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R180
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001606058,2156-IPW60R180P7XKSA1,INFINFIPW60R180P7XKSA1
Standard Package 30
Win Source Part Number 1065277-IPW60R180P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R180P7XKSA1 CAD Model

Description

The IPW60R180P7XKSA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ P7
  • Drain to Source Voltage (Vdss): 650 V
  • Continuous Drain Current: 18A @ 25°C
  • Maximum Drain-Source On-Resistance (Rds On): 180mOhm @ 5.6A and 10V
  • Gate Charge (Qg): 25 nC @ 10V
  • Input Capacitance (Ciss): 1081 pF @ 400V
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-247-3
  • Mounting: Through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
31+ $1.6508 $51.1748
65+ $1.5463 $100.5095
101+ $1.4941 $150.9041
144+ $1.3896 $200.1024
187+ $1.3374 $250.0938
234+ $1.2851 $300.7134
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Availability: 20,970 pieces
MOQ: 31 pcs
Order Increment : 1 pcs
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