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Same model may have multiple batches, images only for reference.
IPW60R190E6 Real Image
Same model may have multiple batches, images only for reference.

IPW60R190E6

Part No IPW60R190E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20.2A TO247
Datasheet
IPW60R190E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069121-IPW60R190E6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPW60R190E6 CAD Model

Description

The Infineon Technologies IPW60R190E6 is a MOSFET technology-based power transistor that comes under the category of discrete semiconductor products.

  • Supply and Demand: limited
  • Popularity: medium

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Quantity Unit Price Ext. Price
6+ $8.3804 $50.2824
15+ $6.8763 $103.1445
23+ $6.6614 $153.2122
32+ $6.4465 $206.2880
41+ $6.2316 $255.4956
54+ $5.5870 $301.6980
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Availability: 398 pieces
MOQ: 6 pcs
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