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IPW90R1K0C3

Part No IPW90R1K0C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 100 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-21
Package / Case TO-247-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603802-IPW90R1K0C3
Ultra Librarian 3D Model Ultra Librarian IPW90R1K0C3 CAD Model

Description

The 603802-IPW90R1K0C3 is a CoolMOS™ N-Channel MOSFET designed for use in discrete semiconductor products manufactured by Infineon Technologies.

  • Drain to Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id) @ 25°C: 5.7A
  • Maximum On-Resistance (Rds On): 1Ohm @ 3.3A and 10V
  • Power Dissipation: 89W
  • Mounting: Through hole
  • Package: TO-247-3
  • Gate Charge (Qg): 34nC @ 10V
  • Input Capacitance (Ciss): 850pF @ 100V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1327 $51.1848
58+ $1.7500 $101.5000
89+ $1.6953 $150.8817
122+ $1.6406 $200.1532
158+ $1.5859 $250.5722
212+ $1.4218 $301.4216
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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