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Same model may have multiple batches, images only for reference.
IR2112PBF Real Image
Same model may have multiple batches, images only for reference.

IR2112PBF

Part No IR2112PBF
Manufacturer Infineon Technologies
Catalog PMIC - Gate Drivers
Description IC MOSFET DVR HI/LO SIDE 14-DIP
Datasheet
IR2112PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Supply Voltage - Operating 10 V to 20 V
Logic Voltage - VIL, VIH 6V, 9.5V
Current - Peak Output (Source, Sink) 250mA, 500mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise and Fall Time 80ns, 40ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package 14-DIP
Win Source Part Number 115236-IR2112PBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Consumer Electronics, Alternative Energy, Power Management
Ultra Librarian 3D Model Ultra Librarian IR2112PBF CAD Model

Description

The Infineon Technologies 115236-IR2112PBF is an integrated circuit designed for half-bridge driven configuration with two independent channel types.

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Gate Type: IGBT and N-Channel MOSFET
  • Logic Voltage (VIL): 6V
  • Logic Voltage (VIH): 9.5V
  • Peak Output Current (Source): 250mA
  • Peak Output Current (Sink): 500mA
  • High Side Voltage: 600V (Bootstrap)
  • Package Type: 14-DIP
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Operating Supply Voltage: 10V to 20V
  • Rise Time: 80ns
  • Fall Time: 40ns
  • Category: Integrated Circuits
  • Status: Active
  • Applications: industrial, consumer electronics, alternative energy, and power management

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