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Same model may have multiple batches, images only for reference.
IRF100P218AKMA1 Real Image
Same model may have multiple batches, images only for reference.

IRF100P218AKMA1

Part No IRF100P218AKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 209A TO247AC
Datasheet
IRF100P218AKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series StrongIRFET™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.28mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs 412 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 24000 pF @ 50 V
Power Dissipation (Max) 3.8W (Ta), 556W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Standard Package 25 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1026907-IRF100P218AKMA1
Ultra Librarian 3D Model Ultra Librarian IRF100P218AKMA1 CAD Model

Description

The 1026907-IRF100P218AKMA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Product Name: 1026907-IRF100P218AKMA1
  • Type: N-Channel MOSFET
  • Manufacturer: Infineon Technologies
  • Series: StrongIRFET™
  • Vdss: 100V
  • Id: 209A @ 25°C
  • Rds On (Max): 1.28mOhm @ 100A and 10V
  • Mounting Type: Through-Hole
  • Package: TO-247-3
  • Qg: 412 nC @ 10V
  • Ciss: 24000 pF @ 50V
  • Operating Temperature: -55°C to 175°C
  • Status: Active

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Quantity Unit Price Ext. Price
11+ $4.8043 $52.8473
26+ $3.9420 $102.4920
40+ $3.8189 $152.7560
55+ $3.6957 $203.2635
70+ $3.5725 $250.0750
94+ $3.2029 $301.0726
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