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Same model may have multiple batches, images only for reference.
IRF1010NL
Same model may have multiple batches, images only for reference.

IRF1010NL

Part No IRF1010NL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 85A TO-262
Datasheet
IRF1010NL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 125872-IRF1010NL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010NL CAD Model

Description

The IRF1010NL is a MOSFET designed by Infineon Technologies.

  • Status: Obsolete (EOL)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 85A (Tc)
  • Packaging: TO-262
  • Temperature Range: -55°C to 175°C
  • Category: Discrete semiconductor products
  • Popularity: Medium
  • Supply and Demand: Balanced

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